Guidance for Selecting Silicon Carbide (SiC) Schottky Diode
Guidance for Selecting Silicon Carbide (SiC) Schottky Diode - Selecting an SiC Schottky boost diode is different from a Silicon diode because of its superior reverse characteristics (the virtual zero reverse recovery current) of this device.
And in the following article you are provided with informations regarding on how to select SiC Schottky for different power rated bost converter typically for a Continuous Conduction Mode (CCM) PFC applications.
You will be taken into a Mathcad sections which describe you with detailed explanations and calculations for selecting SiC Schottky diodes as mentioned above.
The figure shows you a typical active PFC boost converter circuit diagram which perform an active power factor correction boost converter.
This is why the SiC Schottky diode has been used, to avoid the switching loss in the diode itself and in order to meet efficiency and thermal specifications.
Also, you will be taken into sections such 10A/600V SiC Schottky Diode (CSD10060) Forward Characteristics, and Power Loss Calculation of SiC Boost Diode in CCM PFC Applications.
Please follow complete article of Guidance for Selecting Silicon Carbide (SiC) Schottky Diode in pdf filetype (source: cree.com).
As stated in the article, this file document is intended for information purpose only, it is not a warranty or a specification.
Tags: Silicon Carbide Diode, Boost Diode, SiC Schott