BU406 Silicon Epitaxial-Base Planar NPN Transistor Datasheet

BU406 Silicon Epitaxial-Base Planar NPN Transistor Datasheet -The BU406 transistor is a Silicon Epitaxial-Base Planar NPN transistor.



BU406 Silicon Epitaxial-Base Planar NPN Transistor Datasheet

BU406 Silicon Epitaxial-Base Planar NPN Transistor Datasheet
-The BU406 transistor is a Silicon Epitaxial-Base Planar NPN transistor. 

These devices are used for horizontal deflection Pb free plating product number BU406L TO220Foutput stages of large screens MTV receivers with 110 C CRT.

In the datasheet you will find absolute maximum rating for Collector Base Voltage (Vcbo): 400V, Emitter Base Voltage (Vebo): 6V, Collector Current (Ic): 7A, Base Current (Ib): 4A. Electrical 

Charactheristics : 70-240 for the DC Current Gain, 1.2V Base Emitter Saturation Voltage, 1V Collector Emitter Saturation Voltage, 0.75us Turn-off Time and 10 MHz Transition Frequency.

Detailed information of BU406 Si-NPN Transistor Datasheet from Unisonic Technologies can be downloaded in 4 pages/153 Kb of pdf filetype.

Tags: silicon epitaxial, npn transistor datasheet, BU406 datasheet,

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